Analysis of Mg-related emissions in p-GaN grown by MOCVD
- 1 December 2003
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 259 (3) , 267-272
- https://doi.org/10.1016/j.jcrysgro.2003.05.001
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wellsApplied Physics Letters, 2002
- Nature of the 2.8 eV photoluminescence band in Mg doped GaNApplied Physics Letters, 1998
- Magnesium acceptor levels in GaN studied by photoluminescenceJournal of Applied Physics, 1998
- Schottky barrier detectors on GaN for visible–blind ultraviolet detectionApplied Physics Letters, 1997
- Mechanisms of band-edge emission in Mg-doped p-type GaNApplied Physics Letters, 1996
- Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor depositionApplied Physics Letters, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °CApplied Physics Letters, 1995
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Luminescence of Be- and Mg-doped GaNJournal of Applied Physics, 1973