Minimum Al0.5Ga0.5As-GaAs heterojunction width determined by sputter-Auger techniques
- 1 May 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (9) , 610-611
- https://doi.org/10.1063/1.90862
Abstract
Two intimately connected parameters are investigated: the abruptness of MBE heterojunctions and the minimum depth resolution of the sputter‐Auger technique. Using 250‐eV Ar+ ions and monitoring the Al LVV Auger transition, the sharpest interface measured to date (13–15 Å) is obtained. After correcting for the electron escape depth, a minimum interface width of 9 Å is obtained. Large increases in interface broadening with increasing Ar+ ion energies are observed.Keywords
This publication has 2 references indexed in Scilit:
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- Application of AES to the study of selective sputtering of thin filmsJournal of Vacuum Science and Technology, 1976