Waveguide-Type Optical Modulator of GaAs Quantum Well Double Heterostructures Using Electric Field Effect on Exciton Absorption
- 1 June 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (6A) , L442
- https://doi.org/10.1143/jjap.24.l442
Abstract
This letter describes a GaAs/AlGaAs quantum well (QW) waveguide-type optical modulator utilizing an electric field effect on two-dimensional exciton absorption. The waveguide modulator has the same structure as QW laser diodes, and is therefore suitable for monolithic integration with a laser diode. Optical modulation was measured up to 1 Gbit/s at a driving voltage as low as 1.4 V. The 3 dB-down modulation rate was 900 Mbit/s, but higher speed operation is expected.Keywords
This publication has 4 references indexed in Scilit:
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- Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW HeterostructuresJapanese Journal of Applied Physics, 1984
- High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structureApplied Physics Letters, 1984
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