Carrier profile evaluation for a Zn-doped InGaAsP/InGaAsP multiquantum well using a low-temperature capacitance-voltage method
- 18 January 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (3) , 252-254
- https://doi.org/10.1063/1.108981
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A self-consistent two-dimensional model of quantum-well semiconductor lasers: optimization of a GRIN-SCH SQW laser structureIEEE Journal of Quantum Electronics, 1992
- Cavity length and doping dependence of 1.5- mu m GaInAs/GaInAsP multiple quantum well laser characteristicsIEEE Photonics Technology Letters, 1990
- High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 μmElectronics Letters, 1989