Wide bandwidth (100) GaAs/fluorides quarter-wavelength Bragg reflectors grown by molecular beam epitaxy
- 2 December 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (23) , 3474-3476
- https://doi.org/10.1063/1.117256
Abstract
Broadband quarter‐wavelength Bragg reflectors that consist of periodic stacks of fluorides (CaF2–BaF2–CaF2) and GaAs, centered at 1.4 μm, were grown by molecular beam epitaxy. Despite a total fluoride thickness as high as 720 nm, crack‐free surface morphology was obtained. In this letter, we report a crack‐free standard quarter‐wavelength III–V semiconductor‐fluoride Bragg reflector. With only three stacks, the bandwidth with reflectance above 95% is about 650 nm (1.15–1.80 μm), while, near the center wavelength, the reflectivity is as high as 99%. Both important wavelengths of 1.3 and 1.55 μm for optical communication are included in the very wide high reflectance plateau. These mirrors are expected to have wide applications for optical and optoelectronic devices.Keywords
This publication has 21 references indexed in Scilit:
- Broadband saturable absorber for 10-fs pulse generationOptics Letters, 1996
- Wide bandwidth AlAs/AlGaAs tandem Bragg reflectors grown by organometallic vapor phase epitaxyApplied Physics Letters, 1995
- Simple analytical expressions for the reflectivity and the penetration depth of a Bragg mirror between arbitrary mediaOptics Communications, 1995
- Thermal-mismatch-strain relaxation in epitaxial , /, and PbSe// layers on Si(111) after many temperature cyclesPhysical Review B, 1994
- Observation of dihedral transverse patterning of Gaussian beams in nonlinear opticsPhysical Review A, 1994
- Ultrafast all-solid-state laser technologyApplied Physics B Laser and Optics, 1994
- Chirped multilayer coatings for broadband dispersion control in femtosecond lasersOptics Letters, 1994
- Bragg reflector of GaAlAs/AlAs layers with wide bandwidth applicable to light emitting diodesJournal of Applied Physics, 1993
- Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: an antiresonant semiconductor Fabry–Perot saturable absorberOptics Letters, 1992
- GaAs/GaAlAs surface emitting IR LED with Bragg reflector grown by MOCVDJournal of Crystal Growth, 1991