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High performance "Upward" Bipolar technology for VLSI
Home
Publications
High performance "Upward" Bipolar technology for VLSI
High performance "Upward" Bipolar technology for VLSI
JA
J. Agraz-Guerena
J. Agraz-Guerena
RP
R.L. Pritchett
R.L. Pritchett
PP
P.T. Panousis
P.T. Panousis
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1 January 1978
conference paper
Published by
Institute of Electrical and Electronics Engineers (IEEE)
p.
209-212
https://doi.org/10.1109/iedm.1978.189389
Abstract
No abstract available
Keywords
VERY LARGE SCALE INTEGRATION
DOPING
CIRCUITS
IMPURITIES
BORON
SUBSTRATES
OXIDATION
IMPLANTS
TELEPHONY
LABORATORIES
Cited
Cited by 3 articles
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