4H-SiC MOSFETs on (03-38) Face

• 1 April 2002
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 389-393, 1065-1068
• https://doi.org/10.4028/www.scientific.net/msf.389-393.1065

Abstract

Keywords

• 4H-SIC (03-38) PLANE
• CHANNEL MOBILITY
• INTERFACE STATES (OR TRAPS)
• METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET)
• MOS