Sub-10 nm electron beam lithography using cold development of poly(methylmethacrylate)
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- 30 June 2004
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 22 (4) , 1711-1716
- https://doi.org/10.1116/1.1763897
Abstract
We investigate poly(methylmethacrylate) (PMMA) development processing with cold developers (4–10 °C) for its effect on resolution, resist residue, and pattern quality of sub-10 nm electron beam lithography (EBL). We find that low-temperature development results in higher EBL resolution and improved feature quality. PMMA trenches of 4–8 nm are obtained reproducibly at 30 kV using cold development. Fabrication of single-particle-width Au nanoparticle lines was performed by lift-off. We discuss key factors for formation of PMMA trenches at the sub-10 nm scale.Keywords
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