Chemical modification for nanolithography using scanning tunneling microscopy

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Abstract
The key processes needed to push scanning tunneling microscopy (STM) nanolithography (surface modification by STM) into the realm of ordinary semiconductor processes (electron-beam and photolithography) are examined. Complicated nanofeatures are successfully fabricated on an inorganic resist (Ag-Se film), implying the potential possibility of transcription of nanopatterns on a wide variety of substrates. The advantages and disadvantages of two tip-scanning modes (vector scan and raster scan) for writing complicated nanopatterns are described. A scanning tunneling spectroscopy (STS) study clarifies chemical composition of the fabricated nanostructures, which is important for precise pattern transcription.