New Epitaxial Growth Method of Cubic GaN on (100) GaAs Using (CH3)3Ga, HCl and NH3

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Abstract
A new method using (CH3)3Ga, HCl and NH3 sources has been demonstrated for the epilaxial growth of cubic GaN on (100)GaAs substrates. In this method, a GaN buffer layer was deposited on a (100)GaAs substrate at about 500° C prior to the growth of cubic GaN films. The growth rate of cubic GaN was about 3.0 µ m/ h at 850° C. The X-ray diffraction pattern showed only the cubic GaN peak but no hexagonal GaN ones, and the full width at half-maximum (FWHM) of the X-ray diffraction profile of 37.7 minutes was obtained. The room-temperature photoluminescence spectrum of the cubic GaN obtained showed a strong band edge emission at 361.5 nm.