Determination of source and drain series resistances of ultra-short gate-length MODFETs
- 1 February 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (2) , 85-87
- https://doi.org/10.1109/55.32437
Abstract
A practical method to evaluate the parasitic source and drain series resistances of modulation-doped FETs is presented. The method is based on a modified gate-probe technique that uses the gate current crowding phenomenon. It is suitable for complex heterostructure devices since the carrier transport mechanism and physical structure properties around the gate region need not conform to ideal models.Keywords
This publication has 3 references indexed in Scilit:
- A gate probe method of determining parasitic resistance in MESFET'sIEEE Electron Device Letters, 1986
- New method to measure the source and drain resistance of the GaAs MESFETIEEE Electron Device Letters, 1986
- On the determination of source and drain series resistances of MESFET'sIEEE Electron Device Letters, 1984