Lower submicron pattern definition by high-voltage electron-beam lithography

30 September 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (20) , 880-882
https://doi.org/10.1049/el:19820597

Abstract

High-voltage electron-beam writing on polymethyl methacrylate (PMMA) at 50 kV with a dose of 50 μC/cm² has been found to give an outstanding result of the simultaneous formation of isolated and arrayed quarter-micron window patterns of the same size as the electron-beam diameter of a quarter micron.

Keywords

SIMULTANEOUS FORMATION
POLYMETHYL METHYACRYLATE
ELECTRON BEAM VOLTAGE 50 KV
SUBMICRON LITHOGRAPHY
250 NM PATTERNS
SUBMICRON PATTERN DEFINITION
ARRAYED QUARTER-MICRON WINDOW PATTERNS
PMMA
HIGH-VOLTAGE ELECTRON-BEAM LITHOGRAPHY
DOSE 50 MICROC/CM2

This publication has 0 references indexed in Scilit: