Damage and lattice location studies in Hg implanted Hg1–xCdxTe

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Abstract
Rutherford backscattering (RBS) and ion induced X-ray (PIXE) channeling experiments have been used to study the damage accompanying Hg and Al implantations into Hg0.8Cd0.2 Te and its annealing as well as to determine the location of Hg in the crystal. The damage induced by the implantation of 300 keV Hg and 250 keV Al ions at room temperature was found from RBS channeling studies to reach a saturation level at doses of 1 × 1014 cm−2 and 3 × 1014 cm−2 respectively. The damage resembles that characteristic for extended defects and it anneals at ≈ 300°C. The location of the constituents of Hg implanted Hg0.8 Cd0.2 Te was studied by PIXE channeling observing the characteristic X-rays for each element. Angular scans indicate that the channels are mostly blocked by Hg atoms for both unannealed and, to a lesser extent, annealed crystals. This observation supports the suggestion that interstitial Hg atoms may be responsible for the conductivity of Hg implanted Hg1–x Cdg Te.