Heavy Particle Radiation Damage Effects in Lithium Drifted Silicon Detectors
- 1 June 1964
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 11 (3) , 201-205
- https://doi.org/10.1109/tns.1964.4323423
Abstract
Deterioration of charged-particle resolution-width, for p-i-n detectors prepared by lithiumion-drift techniques, was observed during bombardment with protons, and alpha particles. During exposure the resolution-width increased without loss of rectification when damage was confined to the intrinsic region. Significant deterioration in response was observed for 108 particles/cm2. Rapid loss of rectification was observed during exposure to neutrons at energies mostly in the range of from 1 to 10 MeV and for a flux of 109 neutrons/cm2/sec. The damage effects were studied with several detectors having an electron resolution-width of 15 to 20 keV at room temperature, and a window thickness of approximately 1 mg/cm2. Limitations on recovery, by further drift treatment, were observed for an integrated charged-particle flux in excess of 1012 particles/cm2. The response of these detectors to electrons before and after damage, and to heavy charged particles during production of damage and after recovery, is described.Keywords
This publication has 3 references indexed in Scilit:
- Production of Thick Semiconductor Radiation Detectors by Lithium DriftingIEEE Transactions on Nuclear Science, 1963
- Lithium-Drifted p-i-n Junction DetectorsIRE Transactions on Nuclear Science, 1962
- Improved Techniques for Making P+-I-N+ Diode DetectorsIRE Transactions on Nuclear Science, 1962