Light-enhanced reactivation of passivated boron in hydrogen treated silicon
- 1 April 1991
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 170 (1-4) , 361-364
- https://doi.org/10.1016/0921-4526(91)90147-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Dissociation energies of shallow-acceptor-hydrogen pairs in siliconPhysical Review B, 1989
- Boron neutralization and hydrogen diffusion in silicon subjected to low-energy hydrogen implantationApplied Physics A, 1989
- Hydrogen in crystalline semiconductorsApplied Physics A, 1987
- Hydrogenation and annealing kinetics of group-III acceptors in oxidized silicon exposed to keV electronsJournal of Applied Physics, 1986
- Hydrogenation and annealing kinetics of group-III acceptors in oxidized siliconJournal of Applied Physics, 1985
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955