14 GHz low-power highly sensitive static frequency divider using quantum well AlGaAs/GaAs/AlGaAs FET technology

20 June 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (13) , 1173-1175
https://doi.org/10.1049/el:19910732

Abstract

A 14 GHz static frequency divider has been fabricated using an enhancement/depletion 0.3 μm recessed-gate AlGaAs/GaAs/AlGaAs quantum well FET process. The divider has a power dissipation of 35 mW at a supply voltage of 1.80 V. The minimum input power for dividing operation is 8.3 dBm at a maximum input frequency of 14.2 GHz, which is lowered to −6.2 dBm, when operating at 12.0 GHz.

Keywords

1.8 V
12 TO 14.2 GHZ
0.3 MICRON
35 MW
QUANTUM WELL
RECESSED-GATE
14 GHZ
LOW-POWER
ENHANCEMENT/DEPLETION PROCESS
MASTER-SLAVE FLIPFLOP
POWER DISSIPATION
STATIC FREQUENCY DIVIDER
ALGAAS-GAAS-ALGAAS
FET TECHNOLOGY
SHF
SUPPLY VOLTAGE

This publication has 0 references indexed in Scilit: