Electron transport in arsenic triselenide single crystals

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Abstract
Measurements are reported of the electron drift mobility and the DC electrical conductivity of crystalline arsenic triselenide, the data being obtained for the (010) direction. In the room-temperature regime, the electron drift mobility is in the range 20-80 cm2 V-1 s-1, and shows little dependence on temperature. However, at lower temperature it becomes thermally activated. The complete data are well described by a model in which free carriers in the conduction band are in thermal equilibrium with a set of trapping centres of depth 0.17 eV and density 1014-1015 cm3. In the low-temperature regime, the mobility increases with electric field, suggesting a field-dependent trap release probability.