Microstructure and Dielectric Properties of YMnO3 Thin Films Prepared by Dip‐Coating
- 1 May 1998
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 81 (5) , 1357-1360
- https://doi.org/10.1111/j.1151-2916.1998.tb02491.x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- YMnO3 Thin Films Prepared from Solutions for Non Volatile Memory DevicesJapanese Journal of Applied Physics, 1997
- Fabrication of YMnO3 Thin Films on Si Substrates by a Pulsed Laser Deposition MethodJapanese Journal of Applied Physics, 1997
- Growth mechanism of YMnO3 film as a new candidate for nonvolatile memory devicesJournal of Applied Physics, 1996
- Epitaxially grown YMnO3 film: New candidate for nonvolatile memory devicesApplied Physics Letters, 1996
- Ferroelectric thin films prepared by sol-gel processingIntegrated Ferroelectrics, 1992
- Ferroelectric Film Synthesis, Past and Present: A Select ReviewMRS Proceedings, 1990
- Coexistence of Magnetic and Electric Ordering in CrystalsJournal of Applied Physics, 1964
- On the crystal structure of the manganese(III) trioxides of the heavy lanthanides and yttriumActa Crystallographica, 1963