Characterization of a GaAs/HgCdTe interface formed by MOCVD

• 31 December 1988
• journal article
• editorial
• Published by Elsevier in Journal of Crystal Growth
• Vol. 93  (1) , 937-938
• https://doi.org/10.1016/0022-0248(88)90649-5

Abstract

Keywords

• GAAS/HGCDTE INTERFACE FORMED
• CHARACTERIZATION
• INTERFACE FORMED BY MOCVD