Electroluminescence of confined carriers in type II broken-gap p-GaInAsSb/p-InAs single heterojunction

24 April 1995

proceedings article
Published by SPIE-Intl Soc Optical Eng

Vol. 2397, 166-170
https://doi.org/10.1117/12.206866

Abstract

First observation of electroluminescence in type II broken-gap p-GaInAsSb/p-InAs single heterojunctions is reported. Intensive spontaneous emission was obtained under applied bias at T equals 77 - 300 K. Two narrow `resonant' emission bands were observed in the spectral range 3 - 5 micrometers at T equals 77 K with full width at half maximum about 1 - 2 kT. It was established that effect of unusual electroluminescence in isotype type II broken-gap p-p- heterostructure due to indirect (tunnel) radiative recombination of spatial separated 2D- electrons and holes localized in deep adjacent quantum wells at different sides of the interface. Novel tuneable mid-infrared light sources are proposed.

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