Experimental and numerical study of non-latch-up bipolar-mode MOSFET characteristics

1 January 1985

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 150-153
https://doi.org/10.1109/iedm.1985.190916

Abstract

Bipolar-Mode MOSFET characteristics were experimentally and numerically analyzed. It was found that parasitic pnp transistor common base current gain of greater than 0.27 is necessary to realize low forward voltage drop, because carrier distributions are different from those for diodes. It was also found that three decay phases can be distinguished in the turn-off current waveform. A critical current-voltage border beyond which avalanche injection occurs was obtained from the model analysis. Safe operating areas for Non-Latchup Bipolar-Mode MOSFETs are also presented. Current concentration hardly occurs in Bipolar-Mode MOSFETs if avalanche injection is avoided.

Keywords

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