Reducing grain-boundary effects in polycrystalline silicon solar cells
- 15 November 1976
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (10) , 675-676
- https://doi.org/10.1063/1.88898
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Dependence of resistivity on the doping level of polycrystalline siliconJournal of Applied Physics, 1975