(In,Ga)P buffer layers for ZnSe-based visible emitters
- 2 April 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 138 (1-4) , 1-7
- https://doi.org/10.1016/0022-0248(94)90771-4
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Room temperature II–VI lasers with 2.5 mA thresholdJournal of Crystal Growth, 1994
- Integrated heterostructure devices composed of II–VI materials with Hg-based contact layersJournal of Crystal Growth, 1994
- Blue-green injection lasers containing pseudomorphic Zn1−xMgxSySe1−y cladding layers and operating up to 394 KApplied Physics Letters, 1993
- Photovoltage and carrier concentration profiles of ZnSe/ZnCdSe quantum well laser diodesPhysica B: Condensed Matter, 1993
- ZnSe/ZnMgSSe blue laser diodeElectronics Letters, 1992
- Photoassisted metalorganic molecular beam epitaxy of ZnSeApplied Physics Letters, 1992
- Blue and green diode lasers in ZnSe-based quantum wellsApplied Physics Letters, 1992
- Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wellsApplied Physics Letters, 1991
- Blue-green laser diodesApplied Physics Letters, 1991
- Effect of misfit strain on physical properties of InGaP grown by metalorganic molecular-beam epitaxyJournal of Applied Physics, 1990