Zinc self-diffusion, electrical properties, and defect structure of undoped, single crystal zinc oxide

Zinc self-diffusion was measured in single crystal zinc oxide using nonradioactive ${}^{\mathrm{70}}\mathrm{Zn}$ as the tracer isotope and secondary ion mass spectrometry for data collection. Crystal mass was closely monitored to measure ZnO evaporation. Diffusion coefficients were isotropic with an activation energy of 372 kJ/mol. Zinc self-diffusion is most likely controlled by a vacancy mechanism. Electrical property measurements exhibit a plateau in conductivity at intermediate $p{\mathrm{O}}_{\mathrm{2}}$ with an increase in reducing atmospheres. An analysis of the defect structure is presented that indicates that oxygen vacancies are probably the intrinsic ionic defects responsible for n-type conductivity in reducing atmospheres.