Carbon in undoped LEC semi-insulating GaAs; origin and melt composition dependence
- 1 August 1986
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 76 (2) , 517-520
- https://doi.org/10.1016/0022-0248(86)90403-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Correlation of threshold voltage of implanted field-effect transistors and carbon in GaAs substratesApplied Physics Letters, 1984
- Carbon in semi-insulating, liquid encapsulated Czochralski GaAsApplied Physics Letters, 1984
- Effects of stoichiometry on thermal stability of undoped, semi-insulating GaAsJournal of Applied Physics, 1982
- Stoichiometry-controlled compensation in liquid encapsulated Czochralski GaAsApplied Physics Letters, 1982
- Compensation mechanisms in GaAsJournal of Applied Physics, 1980
- Calculations of point defect concentrations and nonstoichiometry in GaAsJournal of Physics and Chemistry of Solids, 1971