Effect of the growth temperature on ZnO thin films grown by plasma enhanced chemical vapor deposition
- 1 July 2002
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 414 (2) , 170-174
- https://doi.org/10.1016/s0040-6090(02)00491-1
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- ZnO growth on Si by radical source MBEJournal of Crystal Growth, 2000
- Ordered semiconductor ZnO nanowire arrays and their photoluminescence propertiesApplied Physics Letters, 2000
- Highly oriented ZnO thin films deposited on Ru/Si substratesThin Solid Films, 1999
- The effect of Zn buffer layer on growth and luminescence of ZnO films deposited on Si substratesJournal of Crystal Growth, 1998
- Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterizationJournal of Applied Physics, 1998
- Growth of ZnO single crystal thin films on c-plane (0 0 0 1) sapphire by plasma enhanced molecular beam epitaxyJournal of Crystal Growth, 1997
- Will UV Lasers Beat the Blues?Science, 1997
- ZnO Green Light Emitting DiodeJapanese Journal of Applied Physics, 1978
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967
- The Origin of the Fluorescence in Self-Activated ZnS, CdS, and ZnOThe Journal of Chemical Physics, 1954