Transient photoluminescence decay study of minority carrier lifetime in GaAs heteroface solar cell structures
- 1 August 1991
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 53 (2) , 123-129
- https://doi.org/10.1007/bf00323871
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfacesApplied Physics Letters, 1989
- Projections of GaAs solar-cell performance limits based on two-dimensional numerical simulationIEEE Transactions on Electron Devices, 1989
- Photoluminescence lifetime in heterojunctionsSolar Cells, 1988
- Influence of junctions on photoluminescence decay in thin-film devicesJournal of Applied Physics, 1987
- Effect of surface recombination on the transient decay of excess carriers produced by short wavelength laser pulsesSolid-State Electronics, 1982
- A generalised approach to lifetime measurement in pn junction solar cellsSolid-State Electronics, 1981
- Theory of transient photovoltaic effects used for measurement of lifetime of carriers in solar cellsSolid-State Electronics, 1977