GaN Nanorods Doped by Hydride Vapor‐Phase Epitaxy: Optical and Electrical Properties
- 5 February 2003
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 15 (3) , 232-235
- https://doi.org/10.1002/adma.200390053
Abstract
Exciting opportunities in nanoscale technology could be made available thanks to this first report of doping GaN nanorods to create p‐ and n‐type materials. Controlled doping of the nanorods is achieved by hydride vapor‐phase epitaxy, and they are characterized optically and electrically. The Figure shows a scanning electron microscopy image of a nanorod field‐effect transistor (scale bar is 10 μm)Keywords
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