Conductorless switching in ion-implanted magnetic bubble devices

Publisher Website
Google Scholar
Abstract
A new, conductorless switching concept for use in ion‐implanted magnetic bubble devices is investigated. The switches consist of two passive merge gates with different orientations relative to the crystal axes placed back‐to‐back. Switching is achieved through a six‐quadrant reversal of the rotation direction of the in‐plane field. A small device was fabricated on 2μm YSmTmCaGeIG material using a single‐masking‐level process in order to test two‐way switching between a 7.5μm×8.5μm storage array and a 17μm‐period backward turn major loop. Results at 100 kHz operating frequency show a 22 Oe (9%) transfer margin at 60 Oe peak triangular drive, and a minimum drive field of 44 Oe. With this new concept, the problems of switch alignment and conductor crossing are eliminated while maintaining, the relatively large minimum lithographic features (2μm–3μm) associated with ion‐implanted bubble technology.