Variation of Hg incorporation in molecular-beam epitaxially grown HgCdTe structures due to growth front roughness and misoriented substrates: Role of kink sites

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Abstract
Theoretical and experimental results are presented to shed light on the atomistic nature of Hg incorporation during HgCdTe growth. The extremely large difference in the bond strengths of the Cd–Te and Hg–Te forces the choice of growth conditions where Hg incorporation is extremely small and controlled essentially by two key factors: (i) Te2 overpressure and (ii) kink site density at the growing surface. While the role of Te2 overpressure was explored earlier, the role of the second factor will be the subject of this paper. The kink site density is in general time dependent during growth; it can also be varied by choosing different growth directions. Consequently, the Hg incorporation rate, which is closely tied to surface kink site density, is altered. These issues and their importance on HgCdTe alloys and HgCdTe–CdTe heterostructures are explored.

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