Fabry-Perot optical intensity modulator using merged epitaxial lateral overgrowth silicon films

2 September 1992

proceedings article
Published by SPIE-Intl Soc Optical Eng

Vol. 1779, 164-171
https://doi.org/10.1117/12.140953

Abstract

This research uses merged epitaxial lateral overgrowth (MELO) of crystalline silicon combined with a multi-dielectric layers as a high reflection mirror; resulting in high-quality silicon Fabry-Perot cavity with well-controlled cavity length and high Finesse. The MELO technique has been employed in the development of novel devices such as accelerometers and pressure sensors. Also, the same growing techniques, selective epitaxial growth (SEG) and epitaxial lateral overgrowth (ELO), have already been applied in development of three dimensional MOS and bipolar transistors. Hence this cavity forming technique is integrated circuit compatible.© (1992) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

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