Consistent gate and substrate current modeling based on energy transport and the lucky electron concept
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 504-507
- https://doi.org/10.1109/iedm.1988.32865
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistorsIEEE Transactions on Electron Devices, 1988
- VIB-3 accurate analysis of impact ionization effects in submicrometer MOSFET devicesIEEE Transactions on Electron Devices, 1987
- MOSFET substrate current model including energy transportIEEE Electron Device Letters, 1987
- Tradeoffs and electron temperature calculations in lightly doped drain structuresIEEE Electron Device Letters, 1985
- High-field drift velocity of electrons at the Si–SiO2 interface as determined by a time-of-flight techniqueJournal of Applied Physics, 1983
- Emission probability of hot electrons from silicon into silicon dioxideJournal of Applied Physics, 1977
- Measurement of the ionization rates in diffused silicon p-n junctionsSolid-State Electronics, 1970
- Electron Scattering by Pair Production in SiliconPhysical Review B, 1967
- Hot-Electron Emission From ShallowJunctions is SiliconPhysical Review B, 1963