Luminescence Characteristics from Gaussian Shaped Quantum Wells
- 1 March 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (3A) , L507
- https://doi.org/10.1143/jjap.28.l507
Abstract
Gaussian shaped quantum wells are fabricated by low temperature migration-enhanced epitaxy. Low temperature photoluminescence measurement shows the superior luminescence characteristics of Gaussian wells. Computer simulation using a one-dimensional tight-binding model shows that this effect is caused by the statistical cancellation of the influence from the surface roughness among the neighboring atomic layers.Keywords
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