A model for atomic mixing and preferential sputtering effects in SIMS depth profiling
- 1 October 1984
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 2 (4) , 1443-1447
- https://doi.org/10.1116/1.572380
Abstract
The development of altered surface layers due to preferential sputtering can be modeled by an algorithm based on the diffusion theory of atomic mixing using a depth-dependent diffusion coefficient. Application of the model to typical SIMS depth profiles of buried layers indicates that the effects of atomic mixing and preferential sputtering can be separated by analysis of the shift and broadening of the measured peaks.Keywords
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