Calculation of high-field diffusivity by a many-particle Monte Carlo simulation including a complete band structure for GaAs
- 15 November 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (10) , 2793-2795
- https://doi.org/10.1063/1.333811
Abstract
The electron diffusion coefficients of GaAs in the high-field regime ranging from 10 to 500 kV/cm have been calculated by a many-particle Monte Carlo simulation. The band-structure model in the simulation, calculated using the empirical pseudopotential method, includes the lowest two conduction bands and the full many-valley structure for each band. Our calculation shows that the diffusivity decreases drastically (by a factor of ≊30) as the field increases from 10 to 250 kV/cm and extremely low diffusion coefficients, 1.1 cm2/s for D1 and 6.1 cm2/s for Dt, are obtained at ≊250 kV/cm for GaAs.This publication has 9 references indexed in Scilit:
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