A model for the successful growth of polycrystalline films of CuInSe2 by multisource physical vacuum evaporation
- 1 February 1993
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 5 (2) , 114-119
- https://doi.org/10.1002/adma.19930050209
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Electric‐field‐induced room‐temperature doping in CuInSe2Advanced Materials, 1992
- Solar cells based on CuIn(Se, S)2Solar Energy Materials and Solar Cells, 1992
- Thoughts on the microstructure of polycrystalline thin film CuInSe2 and its impact on material and device performanceSolar Cells, 1991
- Free energies and enthalpies of possible gas phase and surface reactions for preparation of CuInSe2Journal of Physics and Chemistry of Solids, 1991
- Characterization of CuInSe2 thin films by XPSSurface and Interface Analysis, 1990
- Structure and properties of high efficiency ZnO/CdZnS/CuInGaSe/sub 2/ solar cellsIEEE Transactions on Electron Devices, 1990
- Copper nodule formation in Cu2−αS/CdS solar cellsSolar Energy Materials, 1986
- The structure of CuInSe2 films formed by co-evaporation of the elementsSolar Cells, 1986
- The phase relations in the Cu,In,Se system and the growth of CuInSe2 single crystalsSolar Cells, 1986
- Structural and Solar Conversion Characteristics of the ( Cu2Se ) x ( In2Se3 ) 1 − x SystemJournal of the Electrochemical Society, 1985