0.98 mu m InGaAs-InGaAsP-InGaP GRIN-SCH SL-SQW lasers for coupling high optical power into single-mode fiber

This publication has 10 references indexed in Scilit:

• Very high efficiency GaInAsP/GaAs strained-layer quantum well lasers (λ=980 nm) with GaInAsP optical confinement layers
  Applied Physics Letters, 1992
• Aluminium free InGaAs/GaAs/InGaAsP/InGaP GRINSCH SL-SQW lasers at 0.98 μm
  Electronics Letters, 1992
• High power 1.017-μm strained-layer quantum well lasers grown by metalorganic chemical-vapor deposition
  Applied Physics Letters, 1992
• Empirical fit to band discontinuities and barrier heights in III–V alloy systems
  Applied Physics Letters, 1992
• InGaAs/GaAs 0.98 mu m semi-insulating blocked planar buried heterostructure lasers employing InGaAsP cladding layers
  IEEE Photonics Technology Letters, 1992
• Low-threshold InGaAs strained-layer quantum-well lasers (λ=0.98 μm) with GaInP cladding layers and mass-transported buried heterostructure
  Applied Physics Letters, 1992
• Self-aligned InGaAs/GaAs/InGaP quantum well lasers prepared by gas-source molecular beam epitaxy with two growth steps
  Applied Physics Letters, 1991
• A periodic index separate confinement heterostructure quantum well laser
  Applied Physics Letters, 1991
• High power CW operation of aluminium-free InGaAs/GaAs/InGaP strained layer single quantum well ridge waveguide lasers
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1990
• Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
  Applied Physics Letters, 1989