Low dielectric constant, fluorine-doped SiO2 for intermetal dielectric

• 1 May 1996
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology A
• Vol. 14  (3) , 1124-1126
• https://doi.org/10.1116/1.580280

Abstract

Keywords

• ELECTRON CYCLOTRON RESONANCE
• THERMAL STABILITY
• MATERIALS SCIENCE
• TIME CONSTANT
• REFRACTIVE INDEX
• CHEMICAL VAPOR DEPOSITION
• DIELECTRIC CONSTANT
• FILMS
• DIELECTRIC PROPERTIES
• SEMICONDUCTOR DEVICES
• HIGH FREQUENCY