A monolithically integrated 120-GHz InGaAs/InAlAs/InP HEMT amplifier
- 1 June 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 4 (6) , 194-195
- https://doi.org/10.1109/75.294290
Abstract
We report the design and gain performance for a two-stage 120-GHz monolithically integrated amplifier using 0.1-μm gate length pseudomorphic In/sub 0.60/Ga/sub 0.40/As/In/sub 0.52/Al/sub 0.48/As/InP HEMT's. The two-stage amplifier demonstrated 10-12 dB gain measured between 119.5 to 123.5 GHz. To the best of our knowledge, this is the first demonstration of a monolithically integrated InP HEMT amplifier reported at D-band.Keywords
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