RHEED Patterns and Surface Morphology of ZnSe Homoepitaxial Films Grown by MBE

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Abstract
Homoepitaxial films of ZnSe have been grown on (001)ZnSe substrates by molecular-beam epitaxy(MBE). These films were grown at a constant substrate temperature of 360°C. The Zn-beam pressure (P Zn) was fixed, while the Se-beam pressure (P Se) was varied. The surfaces during the growth were observed by reflection high-energy electron diffraction (RHEED). The grown film observed with a scanning electron microscope showed the smoothest surface for P Se/P Zn= 1.1, which makes the surface a c(2 × 2) surface structure. This suggests that the surface stoichiometry condition does not necessarily provide a smooth surface.