Many-body treatment on the modulation response in a strained quantum well semiconductor laser medium
- 17 August 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (7) , 758-760
- https://doi.org/10.1063/1.107789
Abstract
The carrier density modulation response of a semiconductor laser medium is analyzed. The differential gain and linewidth enhancement factor are computed as functions of strain and threshold gain. The example of InGaAs/InP with different InAs content is used to illustrate the situations of zero, tensile and compressive strain.Keywords
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