The L1L23V and L1L23M1 Coster–Kronig transitions in hydrogenated amorphous silicon

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Abstract
Electron−excited silicon L1L23V and L1L23M1 Coster−Kronig signals from hydrogenated amorphous silicon surfaces have been measured and compared with corresponding signals from both crystalline and amorphous silicon surfaces. The amorphous surfaces were produced by direct ion bombardment of a single crystal sample. Changes due to hydrogen on these low energy signals were not detectable. These results are in agreement with one set of published results and in contradiction with a second set. Large characteristic-loss-type structure was observed in the spectral range from 5—20 eV. This structure was found to be independent of the production of silicon L1 core holes but dependent on the direction of incidence of the primary electron beam.

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