Am quantum noise in 1.3 μm InGaAsP lasers

5 January 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (1) , 29-30
https://doi.org/10.1049/el:19840021

Abstract

Intensity fluctuations for two types of 1.3 μm InGaAsP laser are measured and calculated based on device structural and material parameters and are found to be in good agreement with the quantum-noise-limited level.

Keywords

AM QUANTUM NOISE
MATERIAL PARAMETERS
INGAASP LASER
STRUCTURAL PARAMETERS
III-V SEMICONDUCTORS
1.3 MICRON WAVELENGTH

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