Determination of built-in-potential in N-I-P a-Si:H solar cells

1 May 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 3 (5) , 121-124
https://doi.org/10.1109/EDL.1982.25506

Abstract

This paper describes a simple method to evaluate built-in-potential of P-N junction a-Si:H solar cells. Built-in-potential (Vbi) was calculated from photovoltage-current characteristics at various temperature and illumination levels. Results from two independent, experimental techniques agree extremely well. Vbi= 1.02 eV ± 0.02 eV was obtained for a N-I-P cell having Voc= 650 mV under AM1 illumination.

Keywords

PHOTOVOLTAIC CELLS
P-N JUNCTIONS
LIGHTING
TEMPERATURE
SEMICONDUCTOR DIODES
SCHOTTKY DIODES
GLOW DISCHARGES
CAPACITANCE-VOLTAGE CHARACTERISTICS
SPACE CHARGE
VOLTAGE

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