InGaAsP/InP optical switches using carrier induced refractive index change
- 19 January 1987
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (3) , 141-142
- https://doi.org/10.1063/1.97695
Abstract
InGaAsP/InP optical switches have been fabricated which use a carrier induced refractive index change. Switching has been achieved with a power isolation of 20.5 dB in a 1-mm-long device in multimode operation. This is a promising new step toward making optical integrated circuits.Keywords
This publication has 2 references indexed in Scilit:
- The carrier-induced index change in AlGaAs and 1.3 µm InGaAsP diode lasersIEEE Journal of Quantum Electronics, 1983
- Multimode 2 × 2 optical crossbar switchElectronics Letters, 1978