A model for radiation damage in metal-oxide-semiconductor structures
- 1 June 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 54 (6) , 894-895
- https://doi.org/10.1109/proc.1966.4910
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Ion Transport Phenomena in Insulating FilmsJournal of Applied Physics, 1965
- Electron and hole mobilities in inversion layers on thermally oxidized silicon surfacesIEEE Transactions on Electron Devices, 1965
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Surface Effects of Space Radiation on Silicon DevicesIEEE Transactions on Nuclear Science, 1965
- Radiation effects in fused silica and α-Al2O3Discussions of the Faraday Society, 1961
- Photocurrent, Space-Charge Buildup, and Field Emission in Alkali Halide CrystalsPhysical Review B, 1953