Analysis of the optical confinement factor in semiconductor lasers
- 15 April 1996
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (8) , 3827-3830
- https://doi.org/10.1063/1.361809
Abstract
We derive formulas for the optical confinement factor Γ from Maxwell’s equations for TE and TM modes in the slab waveguide. The numerical results show that the formulas yield correct mode gain for the modes propagating in the waveguide. We also compare the formulas with the standard definition of Γ as the ratio of power flow in the active region to the total power flow. The results show that the standard definition will underestimate the difference of optical confinement factors between TE and TM modes, and will underestimate the difference of material gains necessary for polarization insensitive semiconductor laser amplifiers. It is important to use correct optical confinement factors for designing polarization insensitive semiconductor laser amplifiers. For vertical cavity surface‐emitting lasers, the numerical results show that Γ can be defined as the proportion of the product of the refractive index and the squared electric field in the active region.This publication has 6 references indexed in Scilit:
- Resonant tunneling, eigenvalue and energy band calculation for potential and periodic potential structuresApplied Physics A, 1992
- Design of Fabry-Perot surface-emitting lasers with a periodic gain structureIEEE Journal of Quantum Electronics, 1989
- Structural design for polarization-insensitive travelling-wave semiconductor laser amplifiersOptical and Quantum Electronics, 1989
- Analytical approximation of the radiation confinement factor for the TE0mode of a double heterojunction laserIEEE Journal of Quantum Electronics, 1978
- Gain spectra in GaAs double−heterostructure injection lasersJournal of Applied Physics, 1975
- Mode confinement and gain in junction lasersIEEE Journal of Quantum Electronics, 1965