Electrolyte-gated charge accumulation in organic single crystals
- 13 November 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (20) , 203501
- https://doi.org/10.1063/1.2387884
Abstract
Comparative studies of electrolyte-gated and SiO2-gated field-effect transistors have been carried out on rubrene single crystals by experimentally estimating their accumulated charges. The capacitance of the electrolyte gate at 1mHz was 15μF∕cm2, which is more than two orders of magnitude larger than that of the 100-nm-thick SiO2 gate dielectric. The maximum carrier density in the electrolyte gate was 0.33hole∕molecule, which is considerably larger than that in the SiO2 gate. Furthermore, the transfer characteristics of the electrolyte-gate field-effect transistor showed reversible-peak behavior at an accumulated carrier density of 0.23hole∕molecule.Keywords
This publication has 17 references indexed in Scilit:
- High Carrier Density and Metallic Conductivity in Poly(3‐hexylthiophene) Achieved by Electrostatic Charge InjectionAdvanced Functional Materials, 2006
- High-density electrostatic carrier doping in organic single-crystal transistors with polymer gel electrolyteApplied Physics Letters, 2006
- Gate capacitance in electrochemical transistor of single-walled carbon nanotubeApplied Physics Letters, 2006
- Gate Dielectrics for Organic Field‐Effect Transistors: New Opportunities for Organic ElectronicsAdvanced Materials, 2005
- Polymer Electrolyte Gate Dielectric Reveals Finite Windows of High Conductivity in Organic Thin Film Transistors at High Charge Carrier DensitiesJournal of the American Chemical Society, 2005
- Low-voltage operation of a pentacene field-effect transistor with a polymer electrolyte gate dielectricApplied Physics Letters, 2005
- Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistorsApplied Physics Letters, 2004
- High Performance Electrolyte Gated Carbon Nanotube TransistorsNano Letters, 2002
- Electrochemical carbon nanotube field-effect transistorApplied Physics Letters, 2001
- Silicon Oxide Films Grown in a Microwave DischargeJournal of Applied Physics, 1967