Heterojunction Photocathode Concepts
- 15 November 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (10) , 383-385
- https://doi.org/10.1063/1.1653739
Abstract
A three‐layer voltage‐biased heterojunction structure pGe/vZnSe/p+GaAs(Cs) should allow emission from the GaAs of electrons originally photoinduced in the Ge conduction band. Conceptually this is a possible approach to the development of a high‐yield photocathode with low (0.7 eV) threshold energy.Keywords
This publication has 1 reference indexed in Scilit:
- 3-5 compound photocathodes: A new family of photoemitters with greatly improved performanceProceedings of the IEEE, 1970