Transmission electron microscope observation of dark-spot defects in InGaAsP/InP double-heterostructure light-emitting diodes aged at high temperature
- 15 February 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (4) , 300-301
- https://doi.org/10.1063/1.91469
Abstract
Dark‐spot defects revealed in the electroluminescence patterns of degraded InGaAsP/InP double‐heterostructure light‐emitting diodes that are operated at the current density of 8.0 kA/cm2 at 200 °C were investigated using transmission electron microscopy. Bar‐shaped defects lying in the direction of 〈100〉 or 〈110〉 were observed corresponding to the dark defects. These defects were precipitates of a certain kind of metal or compound and not ’’dislocationlike’’ ones.Keywords
This publication has 3 references indexed in Scilit:
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